Macromodel for CMOS photogate-type active pixel sensors

被引:1
|
作者
Ponce-Ponce, VH [1 ]
Gomez-Castañeda, F [1 ]
Moreno-Cadenas, JA [1 ]
Nava, LMF [1 ]
机构
[1] IPN, Interdisciplinary Sch Engn & Adv Studies, UPIITA, Mexico City 07738, DF, Mexico
关键词
active pixel; CMOS; photogate; PSpice;
D O I
10.1109/ICEEE.2005.1529615
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photogate-type pixels are structures widely used in the design of modern CMOS integrated cameras, but also in real-time CMOS vision sensory system applications. This work introduces a PSpice macromodel for CMOS photogate-type active pixel sensors that can be used for electrical simulation. The aim of this work is to introduce a PSpice macromodel due to the lack of macromodels reported in the literature. Simulation results as well as measurements of a test photogate-type active pixel sensor, fabricated in a standard CMOS process, using 1.2 microns design rules are presented.
引用
收藏
页码:231 / 234
页数:4
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