Reflectivity and photoluminescence studies in Bragg reflectors with absorbing layers

被引：5
|
作者：
Shen, JL [1 ]
Chang, CY
Liu, HC
Chou, WC
Chen, YF
Jung, T
Wu, MC
机构：
[1] Chung Yuan Christian Univ, Dept Phys, Chungli, Taiwan
[2] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 07期
关键词：
D O I：
10.1088/0268-1242/16/7/304
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reflectivity and photoluminescence studies on the GaAs/AIAs Bragg mirror with the InGaAs/InGaAsP multiple quantum well absorbing cover layer were performed at a wavelength of 1550 nm. An absorption dip enhanced by optical confinement of the Fabry-Perot resonance was observed in the reflectivity spectra. The refractive indexes of the AlAs/GaAs quarter-wave stacks and cover layer were obtained by tuning the angle of incidence tin reflectivity) and angle of detection (in photoluminescence) in the Bragg reflector, respectively. The photoluminescence studies also provide a vehicle for obtaining the absorption coefficient of the cavity medium by measuring the quality factor of the Fabry-Perot mode.
引用
收藏
页码：548 / 552
页数：5
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