Effect of the Sputtering Parameters on the Structure and Properties of Cu3N Thin Film Materials

被引：1
|
作者：
Qian Xianyi [2 ]
Huang Zhixin [1 ]
Cui Zengli [1 ]
Guo Jihua [1 ]
机构：
[1] Cental China Normal Univ, Coll Phys Sci & Technol, Wuhan 430079, Peoples R China
[2] Changzhou Inst Technol, Sch Elect Informat & Elect Engn, Changzhou 213002, Peoples R China
来源：
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 2010年 / 25卷 / 06期
基金：
中国国家自然科学基金;
关键词：
copper nitride; sputtering parameters; structure; electrical and optical properties; COPPER NITRIDE; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; RECORDING MEDIA; TIN;
D O I：
10.1007/s11595-010-0123-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Copper nitride (Cu3N) thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering. The effects of sputtering parameters on the structure and properties of the films were studied. The experimental results show that with increasing of RF power and nitrogen partial pressure, the preferential crystalline orientation of Cu3N film is changed from (111) to (100). With increasing of substrate temperature from 70 degrees C to 200 degrees C, the film phase is changed from Cu3N phase to Cu. With increasing sputtering power from 80 W to 120 W, the optical energy decreases from 1.85 eV to 1.41 eV while the electrical resistivity increases from 1.45 X 10(2) Omega . cm to 2.99 x 10(3) Omega . cm, respectively.
引用
收藏
页码：935 / 937
页数：3
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