Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices

被引：19
|
作者：
Sun, Hong-Tao [1 ,2 ]
Shimaoka, Fumiaki [1 ]
Miwa, Yuji [1 ]
Ruan, Jian [3 ]
Fujii, Minoru [1 ]
Qiu, Jianrong [4 ]
Hayashi, Shinji [1 ]
机构：
[1] Kobe Univ, Dept Elect & Elect Engn, Grad Sch Engn, Kobe, Hyogo 6578501, Japan
[2] Natl Inst Mat Sci, Int Ctr Young Scientists, Tsukuba, Ibaraki 3050047, Japan
[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[4] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
OPTICS LETTERS | 2010年 / 35卷 / 13期
关键词：
INFRARED LUMINESCENCE; CRYSTALS; SIO2;
D O I：
10.1364/OL.35.002215
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We show that sensitized superbroadband near-IR (NIR) emission in bismuth glass/Si nanocrystal superlattices can be realized. Photoluminescence is enhanced by 1 order of magnitude in this structure. We observed that the excitation wavelength dependence of the NIR emission does not show any distinct structure corresponding to the direct transition of bismuth IR-active centers. Our results suggest that the enhanced emission might result from the energy transfer from Si nanocrystals to IR-active bismuth. This structure may find broad applications for broadband amplifiers and broadly tunable laser sources. (C) 2010 Optical Society of America
引用
收藏
页码：2215 / 2217
页数：3
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