A study on the buffer layer dependence of film texture, surface roughness, and magnetization reversal mechanism in Co/Pt multilayers is presented. Four different buffers are used: (A) 10 nm Cu, (B) 5 nm Ta/10 nm Cu, (C) 5 nm Ta/10 rim Cu/5 nm Ta, and (D) 5 nm Ta/10 nm Cu/5 run Ta/10 nn Cu. The growth of [2 nm Pt/0.5 nn Co](5)/2 nn Pt on top of these buffer layers results in a large variation of film textures and surface morphologies. Samples with a Cu buffer (A) exhibit a low degree of film texture and are relatively rough. MOKE and MFM measurements on these films reveal that the magnetization reverses by the nucleation of numerous small domains due to a large dispersion of the activation energy barrier. Buffer layer structures where the first layer consists of Ta, on the other hand, result in (111)-textured Co/Pt multilayers with a more regular surface morphology. In these samples, magnetization reversal proceeds by fast domain wall movement. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机构:
Ind Technol Res Inst, Nanotechnol Res Ctr, Hsinchu 310, Taiwan
Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 310, TaiwanNatl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
机构:
National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityNational Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
晏春杰
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陈丽娜
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周恺元
杨留鹏
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National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityNational Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
杨留鹏
付清为
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National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityNational Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
付清为
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王文强
岳文诚
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School of Electronics Science and Engineering, Nanjing UniversityNational Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
岳文诚
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梁力克
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陶醉
杜军
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National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityNational Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing University
杜军
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王永磊
刘荣华
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National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing UniversityNational Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures,Nanjing University