Czochralski growth of (La,Sr)(Al,Ta)O3 single crystal

被引：8
|
作者：
Tao, DJ [1 ]
Wu, H
Xu, XD
Yan, RS
Liu, FY
Sinha, APB
Jiang, XP
Hu, HL
机构：
[1] Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China
[2] Hefei Keijing Mat Technol Co Ltd, Hefei 230031, Peoples R China
[3] MTI Corp, Richmond, CA 94804 USA
来源：
OPTICAL MATERIALS | 2003年 / 23卷 / 1-2期
关键词：
(La; Sr)(Al; Ta)O-3; substrate; epitaxial growth;
D O I：
10.1016/S0925-3467(02)00332-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Twin- and crack-free single crystals of (La,Sr)(Al,Ta)O-3 with mixed-perovskite structure have been grown using the Czochralski method. These new crystals with a typical size of 55 mm. in diameter and 50 mm. in length are potential substrate candidates for growing large size and epitaxial HTS and GaN films. Their dielectric constant and dielectric loss at room temperature are 23 and 1 x 10(-4), respectively. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：425 / 428
页数：4
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