FREQUENCY-DEPENDENT PROPERTIES OF InGaAs BOW-TIE DETECTORS IN TERAHERTZ RANGE

被引：7

作者：

Minkevicius, L. ^{[1
,2
]}

Kasalynas, I. ^{[1
]}

Seliuta, D. ^{[1
]}

Tamosiunas, V. ^{[1
,2
]}

Valusis, G. ^{[1
,2
]}

机构：

[1] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Vilnius State Univ, Fac Phys, LT-10222 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2010年 / 50卷 / 02期

关键词：

terahertz emission; InGaAs; antenna effects; FDTD method; RADIATION;

D O I：

10.3952/lithjphys.50204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Finite-difference time-domain simulation results in bow-tie InGaAs diodes are presented. Dependences of electric field amplitude on frequency were investigated for various device shapes and sizes. It was shown that two metallized parts of the bow-tie type detector act as the separate antennas causing thus the experimentally observed fast sensitivity reduction at 1.63, 1.83, and 2.51 THz frequencies. Moreover, it has been demonstrated that the estimated effective average refractive index of the region around the antenna for all investigated angles and dimensions is nearly constant, and this constant value could be used for further estimation of frequency dependent properties in the case of other slightly altered bow-tie detector geometry.

引用

页码：173 / 180

页数：8

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