Interface study of atomic-layer-deposited HfO2/NO-nitrided SiO2 gate dielectric stack on 4H SiC

被引：0
|
作者：
Wu, Yang [1 ,2 ]
Wang, Shurui [1 ,2 ]
Xuan, Yi [1 ,2 ]
Shen, Tian [1 ,2 ]
Ye, Peide D. [1 ,2 ]
Cooper, James A. [1 ,2 ]
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA
[2] Brick Nanotechnol Ctr, W Lafayette, IN 47906 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：292 / +
页数：2
相关论文
共 50 条
  • [31] Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
    Park, Jaehoo
    Park, Tae Joo
    Cho, Moonju
    Kim, Seong Keun
    Hong, Sug Hun
    Kim, Jeong Hwan
    Seo, Minha
    Hwang, Cheol Seong
    Won, Jeong Yeon
    Jeong, Ranju
    Choi, Jung-Hae
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
  • [32] Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSIFET devices
    Wenger, Ch.
    Lukosius, M.
    Costina, I.
    Sorge, R.
    Dabrowski, J.
    Muessig, H.-J.
    Pasko, S.
    Lohe, Ch.
    MICROELECTRONIC ENGINEERING, 2008, 85 (08) : 1762 - 1765
  • [33] Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
    Hao, Ji-Long
    Bai, Yun
    Liu, Xin-Yu
    Li, Cheng-Zhan
    Tang, Yi-Dan
    Chen, Hong
    Tian, Xiao-Li
    Lu, Jiang
    Wang, Sheng-Kai
    CHINESE PHYSICS B, 2020, 29 (09)
  • [34] Interface Dipole Modulation in HfO2/SiO2 MOS Stack Structures
    Miyata, Noriyuki
    Nara, Jun
    Yamasaki, Takahiro
    Sumita, Kyoko
    Sano, Ryousuke
    Nohira, Hiroshi
    2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
  • [35] Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
    郝继龙
    白云
    刘新宇
    李诚瞻
    汤益丹
    陈宏
    田晓丽
    陆江
    王盛凯
    Chinese Physics B, 2020, 29 (09) : 540 - 545
  • [36] Interfacial and Electrical Characterization of Atomic-Layer-Deposited HfO2 Gate Dielectric on High Mobility Epitaxial GaAs/Ge Channel Substrates
    Dalapati, G. K.
    Kumar, M. K.
    Chia, C. K.
    Gao, H.
    Wang, B. Z.
    Wong, A. S. W.
    Kumar, A.
    Chiam, S. Y.
    Pan, J. S.
    Chi, D. Z.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (08) : H825 - H831
  • [37] Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics
    Nakajima, A
    Khosru, QDM
    Kasai, T
    Yokoyama, S
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 472 - 474
  • [38] Atomic-layer-deposited silicon-nitride/SiO2 stack -: a highly potential gate dielectrics for advanced CMOS technology
    Nakajima, A
    Khosru, QDM
    Yoshimoto, T
    Yokoyama, S
    MICROELECTRONICS RELIABILITY, 2002, 42 (12) : 1823 - 1835
  • [39] Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited HfO2/Si
    Kim, Hyo Kyeom
    Lee, Sang Young
    Yu, Il-Hyuk
    Park, Tae Joo
    Choi, Rino
    Hwang, Cheol Seong
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 955 - 957
  • [40] Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric
    Yang, T.
    Xuan, Y.
    Zemlyanov, D.
    Shen, T.
    Wu, Y. Q.
    Woodall, J. M.
    Ye, P. D.
    Aguirre-Tostado, F. S.
    Milojevic, M.
    McDonnell, S.
    Wallace, R. M.
    APPLIED PHYSICS LETTERS, 2007, 91 (14)
12345