Wavelength selective saturation in optical absorption of array of self-organized InAs/GaAs QDs

被引：0
|
作者：
Brunkov, P. N. [1 ,2 ]
Gutkin, A. A. [1 ]
机构：
[1] Ioffe Inst, 26 Politekh Skaya, St Petersburg 194021, Russia
[2] ITMO Univ, 49 Kronverksky Pr, St Petersburg 197101, Russia
来源：
2019 18TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2019年
关键词：
quantum dots; spectral hole; photocurrent; absorption; INAS QUANTUM DOTS; EMISSION; HOLE; ELECTRONS;
D O I：
10.1109/icocn.2019.8934345
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
We present a photocurrent study of a p-i-n GaAs diode incorporating InAs self-organized quantum dots (QDs) in the intrinsic region. In two-color experiments the possibility of spectral hole burning in the QD absorption spectrum by means of resonant excitation of the dot states is demonstrated.
引用
下载
收藏
页数：3
相关论文
共 50 条
  • [1] Wavelength selective charge accumulation in self-organized InAs/GaAs quantum dots
    Warming, T
    Guffarth, F
    Heitz, R
    Kapteyn, C
    Brunkov, P
    Ustinov, VM
    Bimberg, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S51 - S53
  • [2] OPTICAL INVESTIGATION OF THE SELF-ORGANIZED GROWTH OF INAS/GAAS QUANTUM BOXES
    GERARD, JM
    GENIN, JB
    LEFEBVRE, J
    MOISON, JM
    LEBOUCHE, N
    BARTHE, F
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 351 - 356
  • [3] Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots
    Baira, M.
    Bouzaene, L.
    Sfaxi, L.
    Maaref, H.
    Marty, O.
    Bru-Chevallier, C.
    Journal of Applied Physics, 2009, 105 (09):
  • [4] Temperature dependent optical properties of self-organized InAs GaAs quantum dots
    Heitz, R
    Mukhametzhanov, I
    Madhukar, A
    Hoffmann, A
    Bimberg, D
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) : 520 - 527
  • [5] Magneto-optical studies of self-organized InAs/GaAs quantum dots
    Wilson, LR
    Mowbray, DJ
    Skolnick, MS
    Morifuji, M
    Steer, MJ
    Larkin, IA
    Hopkinson, M
    PHYSICAL REVIEW B, 1998, 57 (04): : R2073 - R2076
  • [6] Temperature dependent optical properties of self-organized InAs/GaAs quantum dots
    R. Heitz
    I. Mukhametzhanov
    A. Madhukar
    A. Hoffmann
    D. Bimberg
    Journal of Electronic Materials, 1999, 28 : 520 - 527
  • [7] Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots
    Baira, M.
    Bouzaiene, L.
    Sfaxi, L.
    Maaref, H.
    Marty, O.
    Bru-Chevallier, C.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
  • [8] Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots
    Cortez, S
    Krebs, O
    Voisin, P
    Gérard, JM
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 220 - 223
  • [9] <<Self-organized>> InAs/GaAs quantum dots.
    Marzin, JY
    Gerard, JM
    Cabrol, O
    Jusserand, B
    Sermage, B
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12): : 1285 - 1293
  • [10] Self-organized growth of InAs/GaAs quantum boxes
    Moison, JM
    Leprince, L
    Barthe, F
    Houzay, F
    Lebouche, N
    Gerard, JM
    Marzin, JY
    APPLIED SURFACE SCIENCE, 1996, 92 : 526 - 531
12345