Energy Harvesting in the Back-End of Line with CMOS Compatible Ferroelectric Hafnium Oxide

被引:11
|
作者
Mart, C. [1 ]
Abdulazhanov, S. [1 ]
Czernohorsky, M. [1 ]
Kaempfe, T. [1 ]
Lehninger, D. [1 ]
Falidas, K. [1 ]
Esslinger, S. [1 ]
Kuehnel, K. [1 ]
Oehler, S. [1 ]
Rudolph, M. [1 ]
Wiatr, M. [2 ]
Kolodinski, S. [2 ]
Seidel, R. [2 ]
Weinreich, W. [1 ]
Eng, L. M. [3 ]
机构
[1] Fraunhofer Inst Photon Microsyst, Dresden, Germany
[2] GLOBALFOUNDRIES, Dresden, Germany
[3] Tech Univ Dresden, Inst Appl Phys, Dresden, Germany
关键词
D O I
10.1109/IEDM13553.2020.9371967
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate the feasibility of thermal energy recovery in the back end of line (BEoL) employing CMOS-compatible ferroelectric hafnium oxide. Efficient pyroelectric energy harvesting with a sizable power density of 92 mWcm(-3) under typical thermal conditions is achieved. Our energy harvesting approach exceeds the efficiency limit of commonly-used thermoelectric materials, without using a heat switch. The low-voltage operation, scalability, and abundance in CMOS manufacturing make HfO2-based ferroelectrics promising candidates for integrated energy harvesting and solid-state refrigeration applications.
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页数:4
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