Energy Harvesting in the Back-End of Line with CMOS Compatible Ferroelectric Hafnium Oxide

被引：11

作者：

Mart, C. ^{[1
]}

Abdulazhanov, S. ^{[1
]}

Czernohorsky, M. ^{[1
]}

Kaempfe, T. ^{[1
]}

Lehninger, D. ^{[1
]}

Falidas, K. ^{[1
]}

Esslinger, S. ^{[1
]}

Kuehnel, K. ^{[1
]}

Oehler, S. ^{[1
]}

Rudolph, M. ^{[1
]}

Wiatr, M. ^{[2
]}

Kolodinski, S. ^{[2
]}

Seidel, R. ^{[2
]}

Weinreich, W. ^{[1
]}

Eng, L. M. ^{[3
]}

机构：

[1] Fraunhofer Inst Photon Microsyst, Dresden, Germany

[2] GLOBALFOUNDRIES, Dresden, Germany

[3] Tech Univ Dresden, Inst Appl Phys, Dresden, Germany

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

D O I：

10.1109/IEDM13553.2020.9371967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the feasibility of thermal energy recovery in the back end of line (BEoL) employing CMOS-compatible ferroelectric hafnium oxide. Efficient pyroelectric energy harvesting with a sizable power density of 92 mWcm(-3) under typical thermal conditions is achieved. Our energy harvesting approach exceeds the efficiency limit of commonly-used thermoelectric materials, without using a heat switch. The low-voltage operation, scalability, and abundance in CMOS manufacturing make HfO2-based ferroelectrics promising candidates for integrated energy harvesting and solid-state refrigeration applications.

引用

页数：4

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