Dissipative macroscopic quantum tunneling in type-I superconductors

被引:4
|
作者
Zarzuela, R. [1 ]
Chudnovsky, E. M. [1 ,2 ]
Tejada, J. [1 ]
机构
[1] Univ Barcelona, Fac Fis, Dept Fis Fundamental, E-08028 Barcelona, Spain
[2] CUNY, Lehman Coll, Dept Phys, Bronx, NY 10468 USA
来源
PHYSICAL REVIEW B | 2011年 / 84卷 / 18期
关键词
HIGH-TEMPERATURE SUPERCONDUCTORS; DOMAIN-WALLS; VORTEX; FERROMAGNETS; NUCLEATION; VORTICES; SYSTEM; CREEP; LINES; DECAY;
D O I
10.1103/PhysRevB.84.184525
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study macroscopic quantum tunneling of interfaces separating normal and superconducting regions in type-I superconductors. A mathematical model is developed that describes dissipative quantum escape of a two-dimensional manifold from a planar potential well. It corresponds to, e. g., a current-driven quantum depinning of the interface from a grain boundary or from an artificially manufactured pinning layer. Effective action is derived and instantons of the equations of motion are investigated. The crossover between thermal activation and quantum tunneling is studied and the crossover temperature is computed. Our results, together with recent observation of nonthermal low-temperature magnetic relaxation in lead, suggest the possibility of a controlled measurement of quantum depinning of the interface in a type-I superconductor.
引用
收藏
页数:6
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