Preparation of boron nitride thin films by MOCVD

被引：0

作者：

Lee, SY ^{[1
]}

Jin, YG ^{[1
]}

Nam, YW ^{[1
]}

Lee, JK ^{[1
]}

Park, D ^{[1
]}

机构：

[1] Soong Sil Univ, Seoul, South Korea

来源：

CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING | 1998年 / 495卷

关键词：

D O I：

暂无

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Boron nitride thin films were prepared on Si(100) substrate by CVD. Triethylboron and ammonia were employed as precursors and various operating parameters such as reactor pressure, temperature, feed rates of gases were varied to investigate their effects on deposition rate and film characteristics. Total gas pressure in the reactor was varied from atmospheric to 1 torr. Deposition temperature was in the range 850 - 1,050 degrees C. Deposition rate increased with partial pressure of TEE but decreased with total pressure in the reactor. Deposited films were examined with SEM, FTIR, XPS, AES, XRD. Prepared films were BN of turbostratic structure.

引用

页码：119 / 124

页数：6

共 50 条

[31] Deposition of Gallium Nitride Thin Films by MOCVD in Microwave Plasma
Noritaka Ihashi
Ken-ichi Itoh
Osamu Matsumoto
Plasma Chemistry and Plasma Processing, 1997, 17 : 453 - 465
[32] Deposition of gallium nitride thin films by MOCVD in microwave plasma
Ihashi, N
Itoh, K
Matsumoto, O
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1997, 17 (04) : 453 - 465
[33] PREPARATION AND CHARACTERIZATION OF CUBIC BORON-NITRIDE AND METAL BORON-NITRIDE FILMS
GISSLER, W
SURFACE AND INTERFACE ANALYSIS, 1994, 22 (1-12) : 139 - 148
[34] Preparation and properties of boron thin films
Kamimura, K
Ohkubo, M
Shinomiya, T
Nakao, M
Onuma, Y
JOURNAL OF SOLID STATE CHEMISTRY, 1997, 133 (01) : 100 - 103
[35] Preparation and properties of boron thin films
Department of Electric and Electronic Engineering, Shinshu University, 500 Wakasato, Nagano 380-8553, Japan
不详
Thin Solid Films, (342-344):
[36] Preparation and properties of boron thin films
Kamimura, K
Nagaoka, T
Shinomiya, T
Nakao, M
Onuma, Y
Makimura, M
THIN SOLID FILMS, 1999, 343 : 342 - 344
[37] Preparation and characterization of MOCVD bismuth telluride thin films
Boulouz, A
Giani, A
Pascal-Delannoy, F
Boulouz, M
Foucaran, A
Boyer, A
JOURNAL OF CRYSTAL GROWTH, 1998, 194 (3-4) : 336 - 341
[38] Preparation and characterization of MOCVD thin films of zinc sulphide
Osasona, O
Djebah, A
Ojo, IAO
Eleruja, MA
Adedeji, AV
Jeynes, C
Ajayi, EOB
OPTICAL MATERIALS, 1997, 7 (03) : 109 - 115
[39] Recent development in the preparation of ferroelectric thin films by MOCVD
Funakubo, H
FERROELECTRIC RANDOM ACCESS MEMORIES FUNDAMENTALS AND APPLICATIONS, 2004, 93 : 95 - 103
[40] Preparation of ZnS thin films by using photoassisted MOCVD
Yoon, Young-Gui
Choi, In-Hwan
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 63 (08) : 1609 - 1614

← 1 2 3 4 5 →