Low DC-power Ku-band RTD VCO based on an InP monolithic RTD/HBT technology

被引：0
|
作者：
Choi, SY [1 ]
Jeong, Y [1 ]
Yang, K [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South Korea
来源：
2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年
关键词：
heterojunction bipolar transistor (HBT); InP; monolithic microwave integrated circuit (MMIC); resonant tunneling diode (RTD); voltage controlled oscillator (VCO);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a Ku-band voltage-con trolled oscillator with extremely low power consumption based on an InP-based RTD/HBT technology. In order to reduce the power consumption, an InP-based RTD is used for microwave power generation, which shows the negative resistance characteristics at a low voltage. The VCO exhibits an oscillation frequency of 14.3 GHz at a bias current or 2.1 mA and a supply voltage of 0.34 V with the corresponding DC power of 0.71 mW in the VCO core. In addition, a low phase noise of A 18 dBc/Hz at 1 MHz offset has been obtained from the fabricated MMIC VCO.
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页码：1361 / 1364
页数：4
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