1.5 μm room-temperature electrically pumped quantum dot lasers monolithically grown on exact (001) Si

被引：0
|
作者：
Shi, Bei [1 ]
Zhu, Si [1 ]
Li, Qiang [1 ]
Lau, Kei May [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2018年
关键词：
Quantum dot lasers; Monolithic integration; Silicon photonics; III-V on Si;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the first 1.5 mu m electrically-injected InAs/InAlGaAs quantum dot lasers epitaxially grown on (001) silicon. Room temperature pulsed operation was achieved with a threshold density of 1.8 kA/cm(2), a maximum operation temperature of 80 degrees C and an output power of 60 mW/facet.
引用
收藏
页码：61 / 62
页数：2
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