Deuterium diffusion in silicon-doped diamondlike carbon films

被引：3

作者：

Vainonen-Ahlgren, E

Ahlgren, T

Likonen, J

Lehto, S

Sajavaara, T

Rydman, W

Keinonen, J

Wu, CH

机构：

[1] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

[2] Max Planck Inst Plasmaphys, European Fus Dev Agreement Close Support Unit, CSU, EFDA, D-85748 Munich, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.63.045406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed are discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5 +/- 0.2, 0.7 +/- 0.2, 0.6 +/- 0.2, and 1.2 +/- 0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.

引用

页数：7

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