JFETIDG: A Compact Model for Independent Dual-Gate JFETs

被引：0
|
作者：
Xia, Kejun [1 ]
McAndrew, Colin C. [1 ]
Sheng, Hanyu [1 ]
机构：
[1] NXP Semicond, Tempe, AZ USA
来源：
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) | 2017年
关键词：
JFET; device modeling; SPICE; VOLTAGE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a new compact model, JFETIDG, for independent dual-gate JFETs. The model is applicable to JFETs with any combination of p-n junction or MOS gates, captures geometry and temperature dependencies. As a special case, it can model junctionless MOSFETs. The model is verified by comparison to experimental and TCAD data. Verilog-A code for the model is available in the public domain.
引用
收藏
页码：124 / 125
页数：2
相关论文
共 50 条
  • [41] DUAL-GATE BUCKET-BRIGADE DEVICES
    BARSAN, RM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1809 - 1816
  • [42] DUAL-GATE FET PHASE-SHIFTER
    KUMAR, M
    RCA REVIEW, 1981, 42 (04): : 596 - 616
  • [43] Intermodulation analysis of dual-gate FET mixers
    Kim, J
    Kwon, Y
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (06) : 1544 - 1555
  • [44] Dual-gate SOI MOSFETs: Physics and potential
    Colinge, JP
    PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1996, 96 (03): : 271 - 286
  • [45] Impacts of Independent Dual-Gate Operation on Reliability of Nanosheet Junctionless Thin-Film Transistor
    Ma, William Cheng-Yu
    Tsai, Cai-Jia
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6171 - 6176
  • [46] Doubly balanced dual-gate CMOS mixer
    Sullivan, PJ
    Xavier, BA
    Ku, WH
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (06) : 878 - 881
  • [47] Dual-gate induced InP nanowire diode
    Storm, Kristian
    Nylund, Gustav
    Borgstrom, Magnus
    Wallentin, Jesper
    Fasth, Carina
    Thelander, Claes
    Samuelson, Lars
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [48] THE DUAL-GATE BASE RESISTANCE CONTROLLED THYRISTOR
    BALIGA, BJ
    KURLAGUNDA, R
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 223 - 225
  • [49] Focusing properties of dual-gate field emitters
    Nicolaescu, D
    Filip, V
    Itoh, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (03): : 892 - 896
  • [50] DUAL-GATE GAAS-FET SWITCHES
    VORHAUS, JL
    FABIAN, W
    NG, PB
    TAJIMA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 204 - 211
12345