Effect of Er doping on linear and nonlinear optical properties of NiO films

被引:16
|
作者
Shkir, Mohd. [1 ]
Khan, Z. R. [2 ]
Sayed, M. A. [1 ,3 ]
Chandekar, Kamlesh V. [4 ]
Khan, Aslam [5 ]
Kumar, Ashwani [6 ]
Jowhari, Mohammed A. [7 ]
AlFaify, S. [1 ]
机构
[1] King Khalid Univ, Coll Sci, Dept Phys, Adv Funct Mat & Optoelect Lab, Abha 61413, Saudi Arabia
[2] Univ Hail, Dept Phys, Fac Sci, POB 2440, Hail, Saudi Arabia
[3] Al Azhar Univ, Dept Phys, Fac Sci, Assiut 71524, Egypt
[4] Rayat Shikshan Sansthas Karmaveer Bhaurao Patil C, Dept Phys, Navi Mumbai 400703, Maharashtra, India
[5] King Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia
[6] IK Gujral Punjab Tech Univ, Dept Phys, Kapurthala 144601, India
[7] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah 21589, Saudi Arabia
关键词
Er: NiO nanostructures thin films; Structural properties; Optical band gap; Refractive index; Nonlinear optics; OXIDE THIN-FILMS; NICKEL-OXIDE; ELECTROCHROMIC PROPERTIES; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; PHYSICAL-PROPERTIES; DOPED NIO; SEMICONDUCTOR; ABSORPTION; SCATTERING;
D O I
10.1016/j.cjph.2021.05.020
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The Er:NiO nanostructured thin films were fabricated using the spray pyrolysis method with 0.0, 2.5 and 5.0 wt.% dopant contents. Structural phase analysis of films reveals cubic structures with preferential growth along (111) plane at angle 2 theta similar to 37.41 degrees. Optical investigation of as-prepared films reveals redshift in optical bandgap (Eg) with an increase in Er contents due to the reduction of transparency in the visible region. The obtained Eg values are reduced from 3.95 to 3.80 eV with Er contents. The calculated values of chi(3) and n(2) were found between 1.81 x 10(-15) to 4.56 x 10(-11) esu and 5.13 x 10(-14) to 5.45 x 10(-10) esu, respectively. The prepared films are more suitable for optoelectronic applications due to the high transparency and Eg.
引用
收藏
页码:547 / 557
页数:11
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