Fabrication and characterization of SrBi2Ta2O9-Bi2SiO5 thin films by pulsed laser deposition

被引：0
|
作者：
Toyoshima, Y [1 ]
Takahashi, M [1 ]
Noda, M [1 ]
Okuyama, M [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Area Mat & Device Phys, Toyonaka, Osaka 5608531, Japan
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SrBi2Ta2O9-Bi2SiO5 (SBT-BSO) thin films have been prepared on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at low temperature, 300 to 450 degreesC. We succeeded in crystallizing SBT at 350 degreesC and P-E hysterisis loops of SBT-BSO thin film were observed and the curve was almost the same as that of SBT. Binding state of BSO has been investigated by XPS spectra, Raman spectra and AFM. As a result it is confirmed that the binding state of BSO in ceramics is different from that in films prepared by PLD. Moreover we tried to anneal SBT and SBT-BSO thin films in high pressure O-2 atmosphere, and succeeded in improve ferroelectric properties about SBT.
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页码：S1326 / S1329
页数：4
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