Solution Processed Oxide Thin Film Transistors

被引：5
|
作者：
Avis, Christophe [1 ]
Jang, Jin
机构：
[1] Kyung Hee Univ, Dept Informat Display, Seoul, South Korea
来源：
THIN FILM TRANSISTORS 12 (TFT 12) | 2014年 / 64卷 / 10期
关键词：
SOL-GEL; LOW-TEMPERATURE; TFT;
D O I：
10.1149/06410.0101ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The performance of oxide thin-film-transistors (TFTs) by solution process is investigated. From the choice of precursors to the TFTs, each step has its own importance to produce high performance TFTs. The TFT performance is also enhanced by the use of high-k dielectrics such as aluminum oxide (AlOx) instead of silicon dioxide (SiO2). We discuss the performance of both crystalline (SnO2, In2O3) and amorphous (ZTO, IZTO) active materials, manufactured by inkjet-printing. Field-effect mobility of 110cm(2)/Vs is achieved.
引用
收藏
页码：101 / 107
页数：7
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