A Planar Single-ended Kilowatt-level VHF Class E Power Amplifier

被引:0
|
作者
Tong, Renbin [1 ]
Book, Stefan [1 ]
Duc, Long Hoang [1 ]
Dancila, Dragos [1 ]
机构
[1] Uppsala Univ, Microwave Grp, Angstrom Lab, SE-75121 Uppsala, Sweden
关键词
Class E; LDMOS; high efficiency; high power; VHF; power amplifier (PA);
D O I
10.23919/eumc.2019.8910715
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper demonstrates a high-efficiency kilowatt-level Class E RF power amplifier which is designed as RF source for particle accelerator energy systems. Class E method of switch mode feathers is employed here to improve efficiency for such high power kilowatts PA in a single chip. It uses a powerful LDMOS-transistor in a single-ended design and provides 1200 W peak power with 83% drain efficiency and 19.9 dB gain at 100 MHz operation. In addition it provides 1010 W peak power with 87% drain efficiency and 20.4 dB gain at 102 MHz operation. All measurements were performed in pulsed operation with a 5% duty cycle, 3.5 ms pulse at 14 Hz repetition. According to the authors' knowledge, this kilowatts power amplifier adopted Class E method is reported at first time in this field.
引用
收藏
页码:892 / 895
页数:4
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