Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

被引:24
|
作者
Pu, Yunti [1 ]
Zhu, Jiliang [1 ]
Zhu, Xiaohong [1 ]
Luo, Yuansheng [1 ]
Wang, Mingsong [1 ]
Li, Xuhai [1 ]
Liu, Jing [1 ]
Zhu, Jianguo [1 ]
Xiao, Dingquan [1 ]
机构
[1] Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
基金
中国国家自然科学基金;
关键词
RESONANCE; GROWTH; STRAIN;
D O I
10.1063/1.3549116
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pb(Zr0.8Ti0.2)O-3 (PZT80/20) thin films were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by RF magnetron sputtering. Mainly perovskite crystalline phase with highly (202)-preferred orientation, determined by x-ray diffraction, was formed in the lead zirconate titanate (PZT)(80/20) thin films. Polarization measurements of the unannealed and aged films showed a clear double hysteresis loop. However, the double hysteresis loop phenomenon was greatly suppressed in the PZT thin films annealed under pure oxygen, and thus they exhibited larger remnant polarization (P-r 6.3 mu C/cm(2)). The related mechanism for the appearance of constricted and double hysteresis loops was investigated to be associated with the realignment and disassociation of defect dipoles via oxygen octahedral rotations or oxygen vacancy diffusion. The butterfly-shaped C-V characteristic curve with a valley gave further evidence for double hysteresis loop characteristic in the unannealed and aged PZT thin films. (c) 2011 American Institute of Physics. [doi:10.1063/1.3549116]
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Orientation dependence of dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayered thin films
    Wu, Jiagang
    Xiao, Dingquan
    Zhu, Jiliang
    Zhu, Jianguo
    APPLIED PHYSICS LETTERS, 2007, 91 (19)
  • [2] Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayer films
    Liu, Hong
    Gong, Xiaogang
    Liang, Jin-e
    Li, Xuedong
    Xiao, Dingquan
    Zhu, Jianguo
    Pu, Zhaohui
    APPLIED PHYSICS LETTERS, 2007, 91 (12)
  • [3] Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayered thin films prepared by rf magnetron sputtering
    Wu, J. G.
    Xiao, D. Q.
    Zhu, J. G.
    Zhu, J. L.
    Tan, J. Z.
    Zhang, Q. L.
    APPLIED PHYSICS LETTERS, 2007, 90 (08)
  • [4] Zr/Ti ratio dependence of the deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin films
    Lee, EG
    Lee, JK
    Kim, JY
    Lee, JG
    Jang, HM
    Kim, SJ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1999, 18 (24) : 2025 - 2028
  • [5] Capacitance tuning in antiferroelectric-ferroelectric PbZrO3-Pb(Zr0.8Ti0.2)O3 epitaxial multilayers
    Pintilie, Lucian
    Boldyreva, Ksenia
    Alexe, Marin
    Hesse, Dietrich
    NEW JOURNAL OF PHYSICS, 2008, 10
  • [6] Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon
    Sambri, A.
    Gariglio, S.
    Torres-Pardo, A.
    Triscone, J. -M.
    Stephan, O.
    Reiner, J. W.
    Ahn, C. H.
    APPLIED PHYSICS LETTERS, 2011, 98 (01)
  • [7] Dynamic hysteresis of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films
    Liu, JM
    Yu, LC
    Yuan, GL
    Yang, Y
    Chan, HLW
    Liu, ZG
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 798 - 805
  • [8] Nanoscale control of ferroelectric polarization and domain size in epitaxial Pb(Zr0.2Ti0.8)O3 thin films
    Paruch, P
    Tybell, T
    Triscone, JM
    APPLIED PHYSICS LETTERS, 2001, 79 (04) : 530 - 532
  • [9] Thickness effect in Pb(Zr0.2Ti0.8)O3 ferroelectric thin films grown by pulsed laser deposition
    Lisca, M
    Pintilie, L
    Alexe, M
    Teodorescu, CM
    APPLIED SURFACE SCIENCE, 2006, 252 (13) : 4549 - 4552
  • [10] Activity of Sub-Band Gap States in Ferroelectric Pb(Zr0.2Ti0.8)O3 Thin Films
    Ramakrishnegowda, Niranjan
    Yun, Yeseul
    Knoche, David S.
    Muehlenbein, Lutz
    Li, Xinye
    Bhatnagar, Akash
    ADVANCED ELECTRONIC MATERIALS, 2020, 6 (04)