This paper presents a 340 GHz 4-way fully integrated phased array transmitter using 0.13um SiGe BiCMOS technology. The chip integrates a 21.25 GHz synthesizer, a quadrupler together with a 1:4 Wilkinson network, power amplifiers, analog phase shifters, 20Gbps OOK modulators, and 2 x 2 on-chip antenna arrays on each channel. Simulated patterns show scanning to +/- 12 degrees and >12dBi gain in E-plane. The chip size of the fully integrated phased array transmitter is 8 x 4.3 mm(2).
机构:
SiGe BiCMOS Development, IBM's Commun. R. and D. Center, Hopewell Junction, NY, United States
DePauw University, Greencastle, IN, United States
University of Michigan, Ann Arbor, MI, United StatesSiGe BiCMOS Development, IBM's Commun. R. and D. Center, Hopewell Junction, NY, United States
Ahlgren, David C.
St. Onge, Stephen
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IBM's Semiconductor Facility, Essex Junction, VT, United States
Vermont Technical College
University of Vermont, Burlington, VT, United StatesSiGe BiCMOS Development, IBM's Commun. R. and D. Center, Hopewell Junction, NY, United States
St. Onge, Stephen
Dupuis, Mark D.
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IBM Facility, Essex Junction, VT, United States
University of Maine, Orono, ME, United States
Syracuse University, Syracuse, NY, United StatesSiGe BiCMOS Development, IBM's Commun. R. and D. Center, Hopewell Junction, NY, United States
Dupuis, Mark D.
Jagannathan, Basanth
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IBM
State University of New York, Buffalo, NY, United StatesSiGe BiCMOS Development, IBM's Commun. R. and D. Center, Hopewell Junction, NY, United States