Design and implementation of a 1-V transformer magnetic feedback low-noise amplifier (LNA) at 5-6 GHz, in a 90 nm complementary metal-oxide-semiconductor (CMOS) process

被引：1

作者：

Kytonaki, Eleni-Sotiria ^{[1
]}

Simitsakis, Paschalis ^{[1
]}

Bazigos, Antonios ^{[1
]}

Papananos, Yannis ^{[1
]}

机构：

[1] Natl Tech Univ Athens, Sch Elect & Comp Engn, Microelect Circuit Design Grp, Athens, Greece

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2011年 / 98卷 / 02期

关键词：

RFIC design; sub-100 nm CMOS; low power; LNA; magnetic feedback; Miller effect; RF-CMOS; TECHNOLOGY;

D O I：

10.1080/00207217.2010.520149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a low-noise amplifier (LNA) suitable for low-voltage operation is presented. The LNA operates at a frequency range between 5 and 6 GHz. Its topology exploits magnetic feedback to achieve high reverse isolation and low noise performance without a significant degradation of the gain and linearity of the circuit. The design has been fabricated, considering full electrostatic discharge protection, in a modern 90 nm complementary metal-oxide-semiconductor process. The measured performance, at 5.4 GHz, shows a reverse isolation of -17.3 dB, a gain of 10.4 dB, a noise figure of 0.98 dB and an input intercept point of 1.4 dBm. The circuit dissipates 12.5 mW from a 1 V supply, while it occupies 0.162 mm(2) of the die area.

引用

页码：235 / 248

页数：14

共 14 条

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