Modeling and Analysis of Low Voltage, High Isolation Capacitive type RF-MEMS Switches

Capacitive type radio frequency micro electro mechanical switches (RF-MEMS) to reduce actuation voltages and to obtain low insertion losses with high isolation is discussed. In this study, we report design, modeling and simulation for three structural configurations using ANSYS to obtain the voltage with and without residual stresses effect, further high frequency simulations are performed using HFSS to obtain low insertion losses and high isolation. The designed switches require 4.3 to 6.5 V as pull-in voltage for actuation. Two of the switch designs have insertion loss of less than 0.45 to 0.6 dB at 22 GHz, and isolation greater than 50 dB for all three designs.