Charge storage and transportation in double layers of Si3N4/SiO2 electret film based on Si substrate

被引：5

作者：

Zhang, XQ ^{[1
]}

Sessler, GM

Xia, XF

Zhang, YW

机构：

[1] Tongji Univ, Pohl Inst Solid State Phys, Shanghai 200092, Peoples R China

[2] Tech Univ Darmstadt, Inst Telecommun & Electroacoust, D-64283 Darmstadt, Germany

来源：

ACTA PHYSICA SINICA | 2001年 / 50卷 / 02期

关键词：

electret; film; charge storage; thermal iron emission;

D O I：

10.7498/aps.50.293

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The characteristics of charge storage in APCVD Si3N4/thermal-grown Sig double layers electret films, charged by coroma were investigated by measurements of isothermal surface potential decay and thermally stimulated discharge (TSD). The results show that all of the samples have high charge stability at room temperature, at 300 and 60 degreesC under 95% of the relative humidity. The transport of the trapped charges due to external excitation for the negatively charged samples is basically controlled by the slow retrapping effect. However, the transport of detrapped positive charges due to external excitation can be described by a model of thermal ion emission.

引用

页码：293 / 298

页数：6

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