DEPOSITION OF HIGH-QUALITY SOL-GEL OXIDES ON SILICON

We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films. © 1990 The Mineral, Metal & Materials Society, Inc.