Er-doped SiO2 with silicon nanocrystals as a new active optical medium

被引：0
|
作者：
Yassievich, IN [1 ]
Bresler, MS [1 ]
Gusev, OB [1 ]
Moskalenko, AS [1 ]
机构：
[1] Ioffe Phys Tech Inst, St Petersburg, Russia
来源：
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷
关键词：
silicon nanocrystall; silicon oxide; erbium; Auger excitation; excitation transport;
D O I：
10.1117/12.514386
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Properties of a new active optical medium, Er-doped SiO2 with silicon nanocrystals, are discussed. We have considered in detail the mechanism of excitation of erbium ions by quantum confined electron-hole pairs in silicon nanocrystals, the diffusion of excitation over the erbium ions inserted into the silicon dioxide matrix and the lifetime of erbium in the excited state limited by de-excitation centers (traps, "black holes") in SiO2.
引用
收藏
页码：391 / 394
页数：4
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