Investigations on morphology and thermoelectric transport properties of Cu plus ion implanted bismuth telluride thin film

被引:7
|
作者
Sinduja, M. [1 ]
Amirthapandian, S. [1 ]
Masarrat, Anha [2 ,3 ]
Krishnan, R. [1 ]
Srivastava, S. K. [1 ]
Kandasami, Asokan [2 ]
机构
[1] HBNI Kalpakkam, Indira Gandhi Ctr Atom Res, Mat Phys Div, Kalpakkam 603102, Tamil Nadu, India
[2] Inter Univ Accelerator Ctr, Mat Sci Div, Aruna Asaf Ali Marg, New Delhi 110067, India
[3] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
关键词
Thermoelectric materials; Thin films; Ion implantation; Doping; Defects; P-TYPE; BI2TE3; ENERGY; POWER; RAMAN; NANOPARTICLES; TEMPERATURE; PERFORMANCE; DEPOSITION; NANORODS;
D O I
10.1016/j.tsf.2020.137834
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Present study reports the effect of copper (Cu+) ion implantation (with different Cu concentrations of 0.5 at%, 1 at%, 1.5 at%, and 2 at%) on thermoelectric transport properties of bismuth telluride thin films. The field emission-scanning electron microscopy and atomic force microscopy results reveal the coalescence of columnar grains with the formation of pinholes in the Cu+ ion implanted samples and the evolution of morphology was explained successfully in the framework of spherical thermal spike model. X-ray diffraction and Raman scattering experiments revealed the reduction in the crystalline nature of Bi2Te3 thin films upon Cu + ion implantation. The depth profiles for the atomic concentration of Bi, Te, and Cu were determined using Rutherford backscattering spectrometry. As a function of Cu+ ion fluences, the Bi atomic concentration gradually decreases across the Bi2Te3 thin films. The Hall-effect and Seebeck coefficient measurements demonstrate the n-type to pt-ype charge carrier conversion upon ion implantation. The charge carrier conversion is attributed to the high density of defect complexes in addition to implanted Cu atoms. These results show the possibility of fabricating TE micro-modules that comprises of n- and p-type semiconductors using ion implantation.
引用
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页数:12
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