Radiation effects in nitride read-only memories

被引：3

作者：

Libertino, S. ^{[1
]}

Corso, D. ^{[1
]}

Mure, G. ^{[1
]}

Marino, A. ^{[1
]}

Palumbo, F. ^{[2
]}

Principato, F. ^{[3
]}

Cannella, G. ^{[3
]}

Schillaci, T. ^{[3
]}

Giarusso, S. ^{[4
]}

Celi, F. ^{[4
]}

Lisiansky, M. ^{[5
]}

Roizin, Y. ^{[5
]}

Lombardo, S. ^{[1
]}

机构：

[1] CNR IMM Sez Catania, I-95121 Catania, Italy

[2] CONICET CNEA, RA-1650 Buenos Aires, DF, Argentina

[3] Univ Palermo, Dip Fis & Tecnol Relat, I-90128 Palermo, Italy

[4] IASFPa INAF, I-90146 Palermo, Italy

[5] Tower Semicond Ltd, Migdal Haemeq, Israel

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

HEAVY-ION EXPOSURE; MODEL; NROM;

D O I：

10.1016/j.microrel.2010.07.068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the influence of different types of radiation on the nitride read-only memories (NROM (R)). The memory cells were irradiated by light ions (Boron). X-rays and gamma-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after gamma or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 10(11) ions/cm(2) (equivalent to 1 Mrad(Si) of TID tolerance). (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1857 / 1860

页数：4

共 50 条

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