Electronic properties of air-exposed GaN(1 -1 0 0) and (0 0 0 1) surfaces after several device processing compatible cleaning steps (vol 495, 143514, 2019)

被引：0
|
作者：
Auzelle, T. [1 ]
Ullrich, F. [2 ,3 ]
Hietzschold, S. [2 ,4 ]
Brackmann, S. [2 ,4 ]
Hillebrandt, S. [2 ,5 ]
Kowalsky, W. [2 ,4 ,5 ]
Mankel, E. [2 ,3 ]
Lovrincic, R. [2 ,4 ]
Fernandez-Garrido, S. [1 ,6 ]
机构：
[1] Leibniz Inst Forschungsverbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
[2] InnovationLab, Speyerer Str 4, D-69115 Heidelberg, Germany
[3] Tech Univ Darmstadt, Mat Sci Dept, Otto Berndt Str 3, D-64287 Darmstadt, Germany
[4] Tech Univ Carolo Wilhelmina Braunschweig, Inst High Frequency Technol, Braunschweig, Germany
[5] Heidelberg Univ, Kirchhoff Inst Phys, Neuenheimer Feld 227, D-69120 Heidelberg, Germany
[6] Univ Autonoma Madrid, Dept Fis Aplicada, Grp Elect & Semicond, C Francisco Tomas y Valiente 7, Madrid 28049, Spain
来源：
APPLIED SURFACE SCIENCE | 2020年 / 518卷
关键词：
D O I：
10.1016/j.apsusc.2020.146279
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页数：1
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