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Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack

被引：42
|
作者：
Mahapatra, R. [1 ]
Chakraborty, Amit K. [2 ]
Horsfall, A. B. [1 ]
Wright, N. G. [1 ]
Beamson, G. [3 ]
Coleman, Karl S. [2 ]
机构：
[1] Univ Newcastle, Sch Elect Engn & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Univ Durham, Dept Chem, Durham DH1 3LE, England
[3] Natl Ctr Electron Spectroscopy & Surface Anal, STFC Daresbury Lab, Warrington WA4 4AD, Cheshire, England
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2839314
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the HfO2/SiC band offset while the larger one of 2.2 eV is due to the interfacial SiO2/SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for HfO2 on SiC without interfacial SiO2. Thus, presence of an interfacial SiO2 layer increases band offsets to reduce the leakage current characteristics. (c) 2008 American Institute of Physics.
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页数：3
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