Micro bolometer (part I: Theoretical backgrounds)

被引：0
|
作者：
Macek, M [1 ]
机构：
[1] Univ Ljubljana, Fac Elect Engn, Microelect Lab, SI-1000 Ljubljana, Slovenia
来源：
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 1998年 / 28卷 / 02期
关键词：
polysilicon bolometers; micro bolometers; microelectronics; NETD; Noise Equivalent Temperature Difference; NEP; Noise Equivalent Power; theoretical backgrounds; fundamental limits; detectivity; responsivity; Johnson noise; phonon noise; IR radiation; InfraRed radiation; IR detectors; InfraRed detectors; IR sensors; InfraRed sensors; temperature resolution;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the extreme case, when the noise of bolometer is limited by Johnson noise (4kTR)(1/2), the insulation of the sensor from the substrate is of the crucial importance. Therefore heat conductance G, and not the temperature coefficient of resistance beta is the limiting factor for sensor detectivity. In this extreme case the fundamental limits for noise equivalent temperature difference NETD is proportional to G(1/2). On the other hand, when the nois is limitted by the thermal fluctuations (phonon noise) the NETD is proportional to G and inversly proportional to square root of beta.
引用
收藏
页码：77 / 80
页数：4
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