Micropipe evolution in silicon carbide

被引：15

作者：

Gutkin, MY

Sheinerman, AG

Argunova, TS

Mokhov, EN

Je, JH

Hwu, YK

Tsai, WL

Margaritondo, G

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[4] Acad Sinica, Inst Phys, Taipei, Taiwan

[5] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.1609038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micropipe bundling and twisting in SiC crystals was revealed using synchrotron x-ray phase sensitive radiography. The computer simulation of micropipe evolution during the crystal growth suggests that the bundled and twisted micropipes arise under the influence of stress fields from other neighboring micropipes. The annihilation of twisted dipoles is attributed to their transformation into semiloops. Reactions of micropipe coalescence lead to the generation of micropipes and/or the annihilation of initial micropipes, resulting in the decrease in their average density. (C) 2003 American Institute of Physics.

引用

页码：2157 / 2159

页数：3

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