Phonon dispersion evolution in uniaxially strained aluminum crystal

被引:1
|
作者
Parthasarathy, Ranganathan [1 ]
Misra, Anil [2 ]
Aryal, Sitaram [1 ]
Ouyang, Lizhi [1 ]
机构
[1] Tennessee State Univ, Dept Math Sci, Box 9616,3500 John A Merritt Blvd, Nashville, TN 37209 USA
[2] Univ Kansas, Dept Civil Environm & Architectural Engn, 1530 W 15th St,Learned Hall, Lawrence, KS 66045 USA
基金
美国国家科学基金会;
关键词
Anomalous phonon dispersion; Non-affine thermal vibrations; Local potential energy; Non-monotonic evolution of phonon group velocities; STRESS DEPENDENCE; PRESSURE; PHASE; PROPAGATION; INSTABILITY; DYNAMICS; SURFACES;
D O I
10.1007/s00161-018-0655-5
中图分类号
O414.1 [热力学];
学科分类号
摘要
The influence of loading upon the phonon dispersion of crystalline materials could be highly nonlinear with certain particular trends that depend upon the loading path. In this paper, we have calculated the influence of [100] uniaxial strain on the phonon dispersion and group velocities in fcc aluminum using second moments of position obtained from molecular dynamics (MD) simulation at 300 K. In contrast to nonlinear monotonic variation of both longitudinal and transverse phonon frequencies along the , and lines of the first Brillouin zone under tension, transverse phonon branches along the line show inflection at specific wavevectors when the compressive strain exceeds 5%. Further, the longitudinal group velocities along the high-symmetry line vary non-monotonically with strain, reaching a minimum at 5% compressive strain. Throughout the strain range studied, the equilibrium positions of atoms displace in an affine manner preserving certain static structural symmetry. We attribute the anomalies in the phonon dispersion to the non-affine evolution of second moments of atomic position, and the associated plateauing of force constants under the applied strain path.
引用
收藏
页码:1027 / 1038
页数:12
相关论文
共 50 条
  • [21] Resonant acceptor states in uniaxially strained semiconductors
    Odnoblyudov, MA
    Prokofiev, AA
    Yassievich, IN
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2002, 94 (03) : 593 - 602
  • [22] Resonance acceptor states in uniaxially strained semiconductors
    M. A. Odnoblyudov
    A. A. Pakhomov
    V. M. Chistyakov
    I. N. Yassievich
    Semiconductors, 1997, 31 : 1014 - 1020
  • [23] Excitonic mass gap in uniaxially strained graphene
    Sharma, Anand
    Kotov, Valeri N.
    Neto, Antonio H. Castro
    PHYSICAL REVIEW B, 2017, 95 (23)
  • [24] Resonance acceptor states in uniaxially strained semiconductors
    Odnoblyudov, MA
    Pakhomov, AA
    Chistyakov, VM
    Yassievich, IN
    SEMICONDUCTORS, 1997, 31 (10) : 1014 - 1020
  • [25] Anomalous Floquet tunneling in uniaxially strained graphene
    Betancur-Ocampo, Yonatan
    Majari, Parisa
    Espitia, Diego
    Leyvraz, François
    Stegmann, Thomas
    Physical Review B, 2021, 103 (15):
  • [26] Impact of SEG on uniaxially strained MuGFET performance
    Der Agopian, Paula Ghedini
    Pacheco, Vinicius Heltai
    Martino, Joao Antonio
    Simoen, Eddy
    Claeys, Cor
    SOLID-STATE ELECTRONICS, 2011, 59 (01) : 13 - 17
  • [27] Resonant acceptor states in uniaxially strained semiconductors
    M. A. Odnoblyudov
    A. A. Prokofiev
    I. N. Yassievich
    Journal of Experimental and Theoretical Physics, 2002, 94 : 593 - 602
  • [28] Divergence of the thermal conductivity in uniaxially strained graphene
    Pereira, Luiz Felipe C.
    Donadio, Davide
    PHYSICAL REVIEW B, 2013, 87 (12)
  • [29] BULK CURRENT INSTABILITIES IN UNIAXIALLY STRAINED GERMANIUM
    SMITH, JE
    MCGRODDY, JC
    NATHAN, MI
    PHYSICAL REVIEW, 1969, 186 (03): : 727 - &
  • [30] Physics of process induced uniaxially strained Si
    Sun, Y.
    Sun, G.
    Parthasarathy, S.
    Thompson, S. E.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 135 (03): : 179 - 183