Polysilanes - Advanced materials for optoelectronics

被引:0
|
作者
Nespurek, S
Wang, G
Yoshino, K
机构
[1] Acad Sci Czech Republ, Inst Macromol Chem, CR-16206 Prague, Czech Republic
[2] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 565, Japan
来源
关键词
polysilane; electronic structure; photoconductivity; electrical properties;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structures, electrical and photoelectrical properties and possible electronic applications of polysilanes are discussed. The electronic properties are influenced by electron delocalization along the polymer silicon backbone. Attached pi-conjugated chromophores improve the photostability of the silicon main chain, and influence the band gap energy and electrical behaviour. Optical excitations lead to the formation of excitons, electron-hole pairs and charge transfer states (ion-pairs). Under the influence of an external electric field, these can dissociate into free charge carriers. Charge carrier transport can be described by a model of disordered polarons.
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页码:223 / 230
页数:8
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