Shell layer dependence of photoblinking in CdSe/ZnSe/ZnS quantum dots

被引：22

作者：

Isnaeni ^{[1
,2
]}

Kim, Kyoo H. ^{[1
,2
]}

Nguyen, Dinh L. ^{[3
]}

Lim, Hanjo ^{[3
]}

Pham Thu Nga ^{[4
]}

Cho, Yong-Hoon ^{[1
,2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Grad Sch Nanosci & Technol WCU, Dept Phys, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, KI NanoCentury, Taejon 305701, South Korea

[3] Ajou Univ, Dept Elect & Comp Engn, Suwon 443749, South Korea

[4] Vietnam Acad Sci & Technol, Inst Mat Sci, Hanoi 10000, Vietnam

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 01期

关键词：

SEMICONDUCTOR NANOCRYSTALS; BLINKING; RECOMBINATION; INTERMITTENCY; ENVIRONMENT; EMISSION; EMITTERS;

D O I：

10.1063/1.3533401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the influence of shell addition, shell thickness, and shape of CdSe/ZnSe/ZnS colloidal quantum dots (QDs) on luminescence, decay lifetime, and photoblinking. The addition of shell layers appreciably increased (decreased) the time interval of on (off) time, while the increase of outer shell thickness only increases the time interval of on-time. The photoblinking was suppressed as the QD shape changes from spherical to ellipsoidal probably due to the reduction of Auger process as the wave function degeneracy of the identical states of the two holes is lifted. We also suggest that interface traps might enhance the Auger recombination. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533401]

引用

页数：3

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