On the high-frequency characteristics of substrate resistance in RF MOSFETs

被引：46
|
作者：
Cheng, YH [1 ]
Matloubian, M [1 ]
机构：
[1] Conexant Syst, Newport Beach, CA 92660 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 12期
关键词：
high-frequency measurements; high-frequency MOSFET; RF device modeling; substrate resistance;
D O I：
10.1109/55.887480
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-frequency (HF) behavior of substrate components in MOSFETs is studied at different bias conditions for a 0.35 mum BICMOS technology in the frequency range up to 10 GHz, It was found that the observed strong bias dependence of the real part of admittance y(22), Re{y(22)}, is mainly contributed by the channel conductance. A very weak bias dependence of substrate resistance mas found after deembedding the measured y(22) to remove the influence of channel resistance R-ds and gate-to-drain capacitance C-gd. The results are key to the understanding and modeling of the HF behavior of MOSFET substrate components for RF IC design.
引用
收藏
页码：604 / 606
页数：3
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