In-situ Temperature Monitoring and Deposition Induced Errors Calibration in Metal-organic Chemical Vapor Deposition

In the process of semiconductor layer growth by metal-organic chemical vapor deposition (MOCVD), temperature measurement errors occur due to deposition on the reactor view port. This temperature shift is detrimental for the fabrication of devices. In this paper, an in-situ temperature and reflectance measurement system is developed for real time observations of process temperature and characterization of growing films. Then, a dynamic correction factor is introduced in the thermal radiance equations to eliminate the deposition induced errors. Marathon process run result verifies the effect. Such an on-line self-calibrating procedure would help improve the yield of temperature sensitive epitaxial growth.