InN grown on GaN/sapphire templates at different temperatures by MOCVD

被引：14

作者：

Lin, J. C.

Su, Y. K.

Chang, S. J. ^{[1
]}

Lan, W. H.

Chen, W. R.

Cheng, Y. C.

Lin, W. J.

Tzeng, Y. C.

Shin, H. Y.

Chang, C. M.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

[4] Da Yeh Univ, Dept Elect Engn, Changhua 515, Taiwan

[5] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Tao Yuan 325, Taiwan

[6] Inst Nucl Energy Res, Tao Yuan, Taiwan

[7] Grand Plast Technol Corp, Hsinchu Ind Pk 30325, Taiwan

来源：

OPTICAL MATERIALS | 2007年 / 30卷 / 04期

关键词：

InN; growth temperature; growth pressure; mobility; carrier concentration;

D O I：

10.1016/j.optmat.2006.12.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 degrees C. Furthermore, it was found that we achieved the highest mobility of 1300 cm(2)/Vs and the lowest carrier concentration of 4.6 x 10(18) cm(-3) from the InN epitaxial layer grown at 625 degrees C. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：517 / 520

页数：4

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