1-nm spatial resolution in carrier profiling of ultrashallow junctions by scanning spreading resistance microscopy

被引：33

作者：

Zhang, Li ^{[1
]}

Tanimoto, Hiroyoshi ^{[2
]}

Adachi, Kanna ^{[2
]}

Nishiyama, Akira ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Ctr Corp Res & Dev, Kawasaki, Kanagawa 2128582, Japan

[2] Toshiba Co Ltd, Semicond Co, Ctr Semicond Res & Dev, Yokohama, Kanagawa 2358582, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期

关键词：

CMOS; doping; scanning spreading resistance microscopy (SSRM); 2-D carrier profiling;

D O I：

10.1109/LED.2008.2000644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this paper, we demonstrate the 1-nm spatial resolution of SSRM in carrier profiling by comparing with the 3-D device simulation. The simulation results show that the accuracy of ultrashallow-junction delineation depends on the effective radius of the probe. The precisely measured junction depth corresponds to an effective probe radius of 0.5 nm. We attribute the high resolution to the elimination of parasitic resistances of the whole measuring circuit. Application to failure analysis of n-type metal-oxide-semiconductor field-effect transistors clarified the impact of halo-carrier profiles on Vth-roll-off characteristics.

引用

页码：799 / 801

页数：3

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