Interface adhesion study of Cu interconnection and low-k organic materials

被引:0
|
作者
Shang, Jing [1 ]
Hao, Jianxia [1 ]
Deng, Qi [1 ]
Hang, Tao [1 ]
Li, Ming [1 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Inst Microelect Mat & Technol, Shanghai 200240, Peoples R China
关键词
Adhesion; interface; RDL; barrier layer; low-k dielectric layer; THERMAL-STABILITY; PARYLENE-N; DIFFUSION; DIELECTRICS; MULTILAYER; POLYIMIDE; BARRIER; ENERGY; OXYGEN;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For microelectronic applications, it is important to have good interfacial properties between copper and dielectric layers. To prevent Cu diffusion issue, Ti and Ta are commonly used as barrier layers. In redistribution layer (RDL) process, Parylene-C (PC) and Polybenzoxazoles (PBO) are applied to dielectric organic materials. Therefore, it is necessary to study the adhesion of Cu/barrier layer (Ta, Ti)/low-k organic dielectric (PBO/PC) system. In this paper, adhesion effect of barrier layer (Ta, Ti) between Cu and low-k organic material (PBO/PC) system was investigated by peeling test, transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS). The result shows poor adhesion of Cu/PC can be improved by either Ti or Ta, while the adhesion of Cu/PBO can be only enhanced by Ti.
引用
收藏
页码:686 / 689
页数:4
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