Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

被引：4
|
作者：
Park, Sang-Uk [1 ,2 ]
Kwon, Hyuk-Min [1 ]
Han, In-Shik [1 ]
Jung, Yi-Jung [1 ]
Kwak, Ho-Young [1 ]
Choi, Woon-Il [1 ]
Ha, Man-Lyun [3 ]
Lee, Ju-Il [3 ]
Kang, Chang-Yong [4 ]
Lee, Byoung-Hun [5 ]
Jammy, Raj [4 ]
Lee, Hi-Deok [1 ]
机构：
[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea
[2] Hynix Semicond Inc, Ichon 467701, Gyeonggi, South Korea
[3] Dongbu HiTec Semicond Inc, Seoul 89110, South Korea
[4] Int SEMATECH, Austin, TX 78741 USA
[5] GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 10期
关键词：
DENSITY MIM CAPACITORS; LEAKAGE IMPROVEMENT;
D O I：
10.1143/JJAP.50.10PB06
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, two kinds of multilayered metal-insulator-metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/mu m(2)) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/mu m(2)), while maintaining a low leakage current of about 50 nA/cm(2) at 1 V. The quadratic voltage coefficient of capacitance, alpha gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated. (C) 2011 The Japan Society of Applied Physics
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页数：4
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