Photoreflectance spectroscopy for investigations of semiconductor structures

Photoreflectance spectroscopy as the nondestructive, contactless, room temperature method to investigate semiconductor layers, interfaces, structures and devices is presented. Principles of the method are described. Application to the investigations of the III-V and II-VI compounds structures, including quantum wells, heterojunction bipolar transistors, high electron mobility transistors, vertical cavity surface emitting lasers and quantum dots arrays are shown.