Photoreflectance spectroscopy for investigations of semiconductor structures

被引：0
|
作者：
Misiewicz, J
机构：
来源：
SOLID STATE CRYSTALS IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1997年 / 3179卷
关键词：
photoreflectance spectroscopy; GaAs; GaAlAs; GaInAs; AlInAs; CdTe/CdMnTe; low dimensional structures; surface; interface; HBT; HEMT; VCSEL; QD arrays;
D O I：
10.1117/12.276207
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Photoreflectance spectroscopy as the nondestructive, contactless, room temperature method to investigate semiconductor layers, interfaces, structures and devices is presented. Principles of the method are described. Application to the investigations of the III-V and II-VI compounds structures, including quantum wells, heterojunction bipolar transistors, high electron mobility transistors, vertical cavity surface emitting lasers and quantum dots arrays are shown.
引用
收藏
页码：110 / 120
页数：11
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