Preparation and characterization of phosphorus oxinitride thin films for InP passivation

被引：3
|
作者：
Hbib, H
Bonnaud, O
Quemerais, A
Gauneau, M
Adam, JL
Marchand, R
机构：
[1] UNIV RENNES 1,LAB VERRES & CERAM,CNRS,URA 1496,F-35042 RENNES,FRANCE
[2] UNIV RENNES 1,LAB SPECT SOLIDE & ELECT QUANT,CNRS,URA 1202,F-35042 RENNES,FRANCE
[3] FRANCE TELECOM,CNET,CTR LANNION,B DEPT PCO,F-22307 LANNION,FRANCE
来源：
JOURNAL DE PHYSIQUE III | 1996年 / 6卷 / 11期
关键词：
D O I：
10.1051/jp3:1996198
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present three techniques to prepare stable, homogeneous and moisture insensitive phosphorus oxinitride insulating films. They were fabricated directly from PON solid sample. The deposited films were characterized by optical absorption in UV-visible, X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS). The optical band gap value for the best films is 4 eV. X-ray photoelectron spectroscopy showed that the layers deposited on substrates maintained at temperature T-s < 350 degrees C are POxNy - type and those deposited at temperature T-s greater than or equal to 350 degrees C are POxNyInz - type. The resistivity and breakdown strength of the films are of the order of 10(11) Ohm cm and 10(6) V cm(-1) respectively.
引用
收藏
页码：1489 / 1506
页数：18
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