Impact of ultra thin oxide breakdown on circuits

被引：5
|
作者：
Stathis, JH [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Div Res, Yorktown Hts, NY 10598 USA
来源：
2005 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY | 2005年
关键词：
D O I：
10.1109/ICICDT.2005.1502607
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：123 / 127
页数：5
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