Impact of ultra thin oxide breakdown on circuits

被引：5
|
作者：
Stathis, JH [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Div Res, Yorktown Hts, NY 10598 USA
来源：
2005 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY | 2005年
关键词：
D O I：
10.1109/ICICDT.2005.1502607
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：123 / 127
页数：5
相关论文
共 50 条
  • [1] Ultra-thin dielectric breakdown in devices and circuits: A brief review
    Ho, Chih-Hsiang
    Kim, Soo Youn
    Roy, Kaushik
    [J]. MICROELECTRONICS RELIABILITY, 2015, 55 (02) : 308 - 317
  • [2] Soft breakdown of ultra-thin gate oxide layers
    [J]. (235):
  • [3] Soft breakdown of ultra-thin gate oxide layers
    IMEC, Leuven, Belgium
    [J]. IEEE Trans Electron Devices, 9 (1499-1504):
  • [4] Soft breakdown of ultra-thin gate oxide layers
    Depas, M
    Nigam, T
    Heyns, MM
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1499 - 1504
  • [5] Ultra-thin oxide breakdown for OTP development in power technologies
    Gasparri, Osvaldo
    Bernardoni, Mirko
    Del Croce, Paolo
    Baschirotto, Andrea
    [J]. ELEKTROTECHNIK UND INFORMATIONSTECHNIK, 2021, 138 (01): : 44 - 47
  • [6] Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs
    Chan, CT
    Kuo, CH
    Tang, CJ
    Chen, MC
    Wang, TH
    Lu, SH
    Hu, HC
    Chen, TF
    Yang, CK
    Lee, MT
    Wu, DY
    Chen, JK
    Chien, SC
    Sun, SW
    [J]. IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2004, : 49 - 52
  • [7] Mobility and oxide breakdown behavior in ultra-thin oxide with atomically smooth interface
    Natl Chiao Tung Univ, Hsinchu, Taiwan
    [J]. Int Conf Solid State Integr Circuit Technol Proc, (283-286):
  • [8] Modeling soft breakdown of ultra-thin gate oxide layers
    Houssa, M
    Mertens, PW
    Heyns, MM
    [J]. ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 307 - 312
  • [9] Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide
    Wu, E
    Lai, W
    Khare, M
    Suñé, J
    Han, LK
    McKenna, J
    Bolam, R
    Harmon, D
    Strong, A
    [J]. 40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, : 60 - 72
  • [10] Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's
    Henson, WK
    Yang, N
    Wortman, JJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1999, 20 (12) : 605 - 607
12345