Low resistivity transparent indium tin oxide (ITO) films sputtered at room temperature with H2O addition

被引：0
|
作者：
Onisawa, K
Nishimura, E
Ando, M
Satou, T
Takabatake, M
Minemura, T
机构：
来源：
FLAT PANEL DISPLAY MATERIALS II | 1997年 / 424卷
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D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new kind of amorphous indium tin oxide (ITO) film with good pattern delineation properties and mass production capability, as well as low resistivity and high transparency has been developed. The film was prepared by a cluster-type DC magnetron sputtering apparatus at room temperature with H2O addition to the argon sputtering gas. The amorphous ITO film quality was improved by effective termination of oxygen vacancies with -OH species generated by enhanced decomposition from the added H2O in the plasma.
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页码：341 / 346
页数：4
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