Rietveld refinement for CuInSe2 and CuIn3Se5

被引:56
|
作者
Paszkowicz, W
Lewandowska, R
Bacewicz, R
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Tech Univ Warsaw, Fac Phys, PL-00662 Warsaw, Poland
关键词
semiconductors; crystal growth; crystal structure and symmetry; X-ray diffraction;
D O I
10.1016/S0925-8388(03)00592-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Rietveld refinements for copper indium selenides CuInSe2 and CuIn3Se5 and their mixture were performed using data collected at a Bragg-Brentano diffractometer. The values of lattice parameters, axial ratio and positional parameters are discussed and compared to available literature data for single crystals and polycrystals. Results for CuInSe2 give a(0) = 5.78149(1) Angstrom and c(0) = 11.61879(4) Angstrom. The positional parameter x is determined to be equal 0.2271(4). Refinements for CuIn3Se5 give an indication concerning the choice of a structural model for this compound. Namely, the best fit is obtained for a model based on 1 (4) over bar 2m space group, yielding a composition close to the experimental one and the lattice parameters a(0) = 5.75812(2) Angstrom and c(0) = 11.53593(7) Angstrom. Parameters of this model are discussed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:241 / 247
页数:7
相关论文
共 50 条
  • [41] Fabrication and photosensitivity of heterojunctions based on CuIn3Se5 crystals
    I. V. Bodnar’
    S. E. Nikitin
    G. A. Il’chuk
    V. Yu. Rud’
    Yu. V. Rud’
    M. V. Yakushev
    Semiconductors, 2004, 38 : 1192 - 1197
  • [42] Electrical properties of the ordered defect compound CuIn3Se5
    Wasim, SM
    Rincón, C
    Marín, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (01): : 244 - 252
  • [43] Temperature dependence of the fundamental absorption edge in CuIn3Se5
    Marin, G
    Wasim, SM
    Rincon, C
    Perez, GS
    Power, C
    Mora, AE
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3364 - 3366
  • [44] Phase diagram of the CuIn-2Se system for CuInSe2 crystal growth by controlling Se contents
    Matsushita, H
    Takizawa, T
    JOURNAL OF CRYSTAL GROWTH, 1997, 179 (3-4) : 503 - 509
  • [45] Dynamic electrical conduction in p-type CuIn3Se5
    Essaleh, L.
    Marin, G.
    Wasim, S. M.
    Alimoussa, A.
    Bourial, A.
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 92 : 353 - 358
  • [46] H2O/CuIn3Se5 photoelectrochernical cells:: Fabrication and properties
    Bodnar, IV
    Dmitrieva, ES
    Rud, VY
    Rud, YV
    TECHNICAL PHYSICS, 2005, 50 (03) : 367 - 369
  • [47] Effect of γ-ray radiation on photosensitivity of ZnO/CuIn3Se5 heterojunctions
    Bairamov, B. Kh.
    Bodnar', I. V.
    Emtsev, V. V.
    Poloskin, D. S.
    Rud', V. Yu.
    Rud', Yu. V.
    Yakushev, M. V.
    SEMICONDUCTORS, 2006, 40 (01) : 64 - 66
  • [48] Electrical properties of CuIn3Se5 bulk crystal at low temperature
    Hernández, E
    Pescador, AL
    Rincón, CAD
    León, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 37 (10) : 1088 - 1093
  • [49] Raman spectra of the ordered vacancy compounds CuIn3Se5 and CuGa3Se5
    Rincon, C
    Wasim, SM
    Marin, G
    Delgado, JM
    Huntzinger, JR
    Zwick, A
    Galibert, J
    APPLIED PHYSICS LETTERS, 1998, 73 (04) : 441 - 443
  • [50] Material properties of CuInSe2 prepared by H2Se treatment of CuIn alloys
    V Alberts
    R Swanepoel
    M. J Witcomb
    Journal of Materials Science, 1998, 33 : 2919 - 2925